| PART |
Description |
Maker |
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HX313C9FR-4 |
4GB 512M x 64-Bit DDR3-1333
|
List of Unclassifed Man...
|
| HX316C10F-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| KVR13LE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR16LSE11-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR13S9S8-4 |
4GB 1Rx8 512M x 64-Bit PC3-10600
|
List of Unclassifed Man...
|
| KVR13S9S8K2-8 |
8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
|
List of Unclassifed Man...
|
| KVR16LSE11-4HB |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| MC-4R512FKE8D-840 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HMP351U6AFR8C-S6 HMP351U6AFR8C-S5 HMP351U7AFR8C-S5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, UBDIMM-240
240pin DDR2 SDRAM Unbuffered DIMMs based on 2Gb A version
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
